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NUS5530MNR2G - Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET

NUS5530MNR2G_4304152.PDF Datasheet


 Full text search : Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET


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NUS5530MNR2G Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET
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TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | SOT-186
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 9A条(丁)|20CI
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Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 5.5AI(四)| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 7A条(丁)| TO - 220AB现有
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 8A条(丁)| TO - 220AB现有
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